LAPD 3050

Photodiode by OSI Laser Diode, Inc.

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The LAPD 3050 from OSI Laser Diode is an indium gallium arsenide (InGaAs) avalanche photodiode (APD) module that is designed for light level detection and/or signal transmission applications. The new 50 µm active area device features low dark current, low back reflection and high speed (2.5 GHz) in a miniature package. With spectral response from 1000 nm to 1650 nm at 25 degrees C, the typical wavelength is 1550 nm.

The APD is housed in a hermetically sealed 3-pin coaxial package and coupled to a single-mode fiber pigtail. The overload-tolerant LAPD 3050 device is ideal for use in optical time-domain reflectometers (OTDRs), line receivers and long haul applications. The breakdown voltage is from 50 V (min.) to 70 (max.) and operating and storage temperatures range from -40 degrees to 85 degrees C.

 Product Specifications

    Product Details

    • Part Number :
      LAPD 3050
    • Manufacturer :
      OSI Laser Diode, Inc.
    • Description :
      InGaAs APD Module

    General Parameters

    • Breakdown Voltage :
      50 to 70 V
    • Channels :
      Single
    • Configuration :
      Single
    • Package Type :
      Through-Hole
    • Photodetector Type :
      Avalanche
    • Optical Return Loss :
      -30 dB
    • Photodiode Material :
      InGaAs
    • Reverse Current :
      2 mA
    • Bandwidth :
      2.5 GHz
    • Capacitance :
      1 pF
    • Dark Current :
      2 nA
    • Responsivity/Photosensitivity :
      7 to 9 A/W
    • Wavelength Range :
      1000 to 1650 nm

    Physical Properties

    • Active Area Diameter :
      50 ┬Ám

    Temperature

    • Operating Temperature display :
      -40 to 85 Degree C
    • Storage Temperature :
      -40 to 85 Degree C

    Technical Documents

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